The electronic transport properties of armchair-edged boron nitride nanoribbons（ABNNRs） devices were investigated by the first principle calculations. The calculated results show that the ABNNR device doped with carbon atoms in one of the electrodes acts as a high performance nanoribbon rectifier. It is interesting to find that there exists a particular bias-polarity-dependent matching band between two electrodes,leading to a similar current-voltage（I-V） behavior as conventional P-N diodes. The I-V behavior presents a linear positive-bias I-V characteristic,an absolutely negligible leakage current,and a stable rectifying property under a large bias region. The results suggest that C doping might be an effective way to raise ABNNRs devices＇ rectifying performance.
A new compound, [H2N（CH3）2]2[Zn（btec）]H20 （1, H4btec = 1,2,4,5-benzenetetra- carboxylic acid） has been solvothermally synthesized and structurally characterized by single- crystal X-ray diffraction. The crystal structure is of monoclinic, space group P21/c with a = 9.5741（3）, b = 14.5044（4）, c = 13.7329（5） A,β = 100.582（4）°, V = 1874.61（10） As, C14H20N2O9Zn, Mr = 425.7, Z = 4, Dc = 1.387 g/cm3,μ = 1.349 mm^-1, F（000） = 776, R = 0.0560 and wR = 0.1684 for 2834 observed reflections （1 〉 2a（I））. Compound 1 based onμ4-btec and tetrahedral building unit features a three-dimensional （3D） anionic framework with mixed connected nou topology. The luminescent property and thermogravimetric analysis of compound 1 are investigated.
YANG ELIN Li-XiangDING Qing-RongLIN Zheng-HuanLING Qi-Dan
